We all know that Qualcomm has confirmed that the Super Powerful Qualcomm Snapdragon 8150 Will go official in December. In addition to this, they had sent invites for the event as well. The annual summit will be held in Hawaii on December 4. Recently, a fresh leak about the Snapdragon 8150 surfaced. The leak came up with some of the details of the Snapdragon 8150.
Snapdragon 8150 Will Feature Tri-Cluster CPU Design
A fresh leak by IceUniverse has unveiled some of the details about the upcoming SoC. Let’s have a look at that first.
According to the latest reports, the Snapdragon 8150 will have four low-power Kryo Silver cores. Moreover, it will come with 128KB L2 cache each running at roughly 1.8GHz max in one cluster. In addition to this, there will be a trio of Kryo Gold ones, with 256KB L2 cache per core. It will support max frequency of 2.419GHz in another cluster. Furthermore, a single Kryo Gold core will feature double the L2 cache, at 512KB and a maximum frequency of 2.842Ghz.
The Snapdragon 8150 will be the successor to the Snapdragon 845 processor. The leaked benchmarks have already revealed that it will be the most powerful Android SoC solution yet. According to the previous reports, the Snapdragon 8150 is expected to come with three-cluster CPU core design. This design will be quite similar to the Kirin 980 and Exynos 9820. In addition to this, it will feature one large performance core running at a clock speed of 2.84GHz. This will be accompanied with three medium cores clocked at 2.4GHz, and four small efficiency cores clocked at 1.78GHz. Furthermore, the chipset will be manufactured using the newest 7nm process by TSMC. However, the die size is expected to be 12.4 x 12.4mm. The next generation chipset will see the light on the 4th December this year at the upcoming Technology Summit in Hawaii.